? 2001 in?eon technologies corp. ?optoelectronics division ?san jose, ca www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 3?77 march 23, 2001-12 lh1546at/aab/aabtr 1 form a solid state relay features current limit protection l/o isolation, 5300 v rms typical r on 20 ? load voltage 350 v load current 120 ma high surge capability linear, ac/dc operation clean bounce free switching low power consumption high reliability monolithic receptor smd lead available on tape and reel equivalent to cp clare lca110 flammability; ul94, v agency approvals ul ?file no. e52744 bsi/babt cert. no. 7980 fimko app roval csa ?certi?ation 093751 applications general telecom switching ? on/off hook control ?ring delay ?dial pulse ?ground start ? ground fault protection instrumentation industrial controls see application note 56 description the lh1546 is robust, ideal for telecom and ground fault applications. it is a spst normally open switch (1 form a) that replaces electromechanical relays in many applications. it is constructed using a gaaias led for actuation control and an integrated monolithic die for the switch output. the die, fabricated in a high-voltage dielectrically isolated technology, is comprised of a photodiode array, switch control circuitry and mosfet switches. in addition, it employs current-limiting cir- cuitry which meets fcc 68.302 and other regulatory voltage surge requirements when overvoltage protec- tion is provided. part identi?ation part number description lh1546at 6-pin dip, tubes lh1546aab 6-pin smd, tubes lh1546aabtr 6-pin smd, tape and reel .014 (.35) .010 (.25) .150 (3.81) .110 (2.79) .150 (3.81) .130 (3.30) .020 (.051) min. .300 (7.62) typ. .035 (0.90) .031 (0.80) .100 (2.54) typ. .039 (1.00) min. .022 (0.55) .018 (0.45) .256 (6.50) .248 (6.30) .343 (8.70) .335 (8.50) pin one id. 6 5 4 1 2 3 18 typ. .347 (8.82) .300 (7.62) 4 typ. .343 (8.71) .335 (8.51) .256 (6.50) .248 (6.30) pin one i.d. .039 (0.99) min. .150 (3.81) .130 (3.30) .100 (2.54) .052 (1.33) .048 (1.22) 4 .040 (1.016) .020 (0.508) .0098 (.25) .0040 (.10) .012 (0.31) .008 (0.20) .300 (7.62) .395 (10.03) .375 (9.63) 3 to 7 18 min. .315 (8.00) typ. .050 (1.27) typ. 4 65 123 s' s dc ss' package dimensions in inches (mm) dip smd
? 2001 in?eon technologies corp. ?optoelectronics division ?san jose, ca lh1546at/aab/aabtr www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 3?78 march 23, 2001-12 electrical characteristics, t a =25 c minimum and maximum values are testing requirements. typical values are characteristics of the device and are the result of engineering evaluations. typical values are for information only and are not part of the testing requirements. parameter symbol min. typ. max. units test conditions input led forward current, switch turn-on i fon 1.1 2.0 ma i l =100 ma, t=10 ms led forward current, switch turn-off i foff 0.2 1.0 ma v l ?50 v led forward voltage v f 1.15 1.26 1.45 v i f =10 ma output on-resistance, ac/dc: pin 4 (? to 6 (? r on ?835 ? i f =5.0 ma, i l =50 ma on-resistance, dc: pin 4, 6 (+) to 5 (-) 7.0 10.0 ? i f =5.0 ma, i l =100 ma off-resistance r off 0.5 300 g ? i f =0 ma, v l =?00 v current limit ac/dc i lmt 170 210 250 ma i f =5.0 ma, t=5.0 ms v l =6.0 v off-state leakage current i o 0.35 200 na i f =0 ma, v l =?00 v 0.096 1.0 a i f =0 ma, v l =?50 v output capacitance, pin 4 to 6 c o ?8 pf i f =0 ma, v l =1.0 v 6.7 pf i f =0 ma, v l =50 v switch offset v os 0.3 v i f =5.0 ma transfer input/output capacitance c iso 0.67 pf v iso =1.0 v turn-on time t on 1.14 3.0 ms i f =5.0 ma, i l =50 ma turn-off time t off 0.71 3.0 ms i f =5.0 ma, i l =50 ma absolute maximum ratings, t a =25 c stresses in excess of the absolute maximum ratings can cause permanent damage to the device. these are absolute stress ratings only. functional opera- tion of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. exposure to maximum rating conditions for extended periods can adversely affect device reliability. ambient temperature range ........................................... ?0 to +85? storage temperature range .......................................... ?0 to +150? soldering temperature (t=10 s max.) ......................................... 260? isolation test voltage (for 1.0 s) ........................................... 5300 v rms isolation resistance v io =500 v, t a =25? ............................................................ 10 12 ? v io =500 v, t a =100? .......................................................... 10 11 ? ssr output power dissipation (continuous)............................ 550 mw led continuous forward current ............................................... 50 ma led reverse voltage ( i r 10 ma) ................................................. 8.0 v dc or peak ac load voltage ( i l 50 ma) .................................... 350 v continuous dc load current at 25? bidirectional...........................................................................120 ma unidirectional......................................................................... 200 ma recommended operating conditions 80 60 0 40 120 100 20 40 20 0 20 40 60 80 load current (ma) ambient temperature ( c) i fon =2.0 ma i fon =3.0 ma i fon =4.0 ma i fon =5.0 to 20 ma
? 2001 in?eon technologies corp. ?optoelectronics division ?san jose, ca lh1546at/aab/aabtr www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 3?79 march 23, 2001-12 typical performance characteristics figure 1. led voltage vs. temperature figure 2. led forward current vs. led forward voltage figure 3. led reverse current vs. led reverse voltage figure 4. led current for switch turn-on vs. temperature figure 5. led dropout voltage vs. temperature figure 6. load current vs. load voltage ambient temperature ( c) led forward voltage (v) 1.6 1.5 1.4 1.0 1.3 1.2 1.1 40 20 0 20 40 60 80 i f =50 ma i f =20 ma i f =5.0 ma i f =10 ma i f =1.0 ma i f =2.0 ma 0 20 40 60 80 100 120 00.511.52 led forward current (ma) led forward voltage (v) t = 85 c t = 25 c t = ?0 c 0 2 4 6 8 10 0 2040 6080100 led current (ua) reverse led voltage (v) t = ?0 c t = 25 c t = 85 c 45 30 15 0 15 30 45 60 40 20 0 20406080 temperature ( c) led current for switch turn-on (%), norm. to 25 c i l = 100 ma 1.02 1.06 1. . 1 1.14 1.18 1.22 1.26 40 200 20 406080 temperature ( c) led forward voltage (v) i l = 100 ma 01234 5 load voltage (v) current limit ( a) t = 40 c t = 25 c t = 85 c i f = 5 ma 300 250 200 150 100 50 0
? 2001 in neon technologies corp. optoelectronics division san jose, ca lh1546at/aab/aabtr www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 3?80 march 23, 2001-12 figure 7. current limit vs. temperature figure 8. switch breakdown voltage vs. load current figure 9. switch offset voltage vs. led current figure 10. on-resistance vs. temperature figure 11. variation in on-resistance vs. led current figure 12. switch capacitance vs. applied voltage 40 30 20 10 0 -10 -20 -30 change in current limit (%) norm. to 25 c i f = 5 ma v l = 6 v temperature ( c ) -40 -20 0 20 40 60 80 60 50 40 30 20 10 0 load current ( a) breakdown voltage (v) t = 40 c t = 25 c t = 85 c i f = 0 ma i l < 50 a 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 25 35 45 55 65 75 85 temperature ( c) switch offset voltage (microvolt) i f = 5 ma i f = 5 ma i l = 50 ma temperature ( c) change in ron (%), norm. to 25 c 40 30 20 10 0 -10 -20 -30 -40 -40 -20 0 20 40 60 80 -2 0 2 4 6 8 04 8121620 ac/dc ron variation (%) norm. @ if= 5ma led forward current (ma) i f = 5 ma 0 10 20 30 40 50 0 2040 6080100 capacitance (pf) applied voltage (v) i f = 0 ma
? 2001 in?eon technologies corp. ?optoelectronics division ?san jose, ca lh1546at/aab/aabtr www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 3?81 march 23, 2001-12 figure 13. insertion loss vs. frequency figure 14. output isolation figure 15. leakage current vs. applied voltage at elevated temperatures figure 16. switch breakdown voltage vs. temperature figure 17. switch offset voltage vs. temperature figure 18. turn-on time vs. temperature frequency (hz) 0.6 0.0 insertion loss (db) 0.5 0.4 0.2 0.1 10 2 10 3 10 4 10 5 0.3 r l =600 ? i f =5 ma 0 20 40 60 80 100 120 isolation (db) frequency (hz) v p = 10 v r l = 50 ? 1000 10000 100000 1000000 0.1 1.0 10.0 100.0 1000.0 0 50 100 150 200 250 300 350 load voltage (v) leakage current (na) t = 85 c t = 70 c t = 50 c i f = 0 ma t = 25 c change in breakdown voltage (%) normalized to 25 c 8 0 4 2 6 6 8 4 10 2 ambient temperature ( c) 40 20 0 20 40 60 80 0.0 0.5 1.0 1.5 2.0 2.5 25 35 45 55 65 75 85 temperature ( c) switch offset voltage (microvolt) i f = 5 ma change in turn-on time (%) norm. to 25 c temperature ( c) 10 6 2 -2 -6 -10 -40 -20 0 20 40 60 80 i f =5 ma i l =50 ma
? 2001 in neon technologies corp. optoelectronics division san jose, ca lh1546at/aab/aabtr www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 3?82 march 23, 2001-12 figure 19. turn-off time vs. temperature figure 20. turn-on time vs. led current figure 21. turn-off time vs. led current 8 5 2 -1 -4 -7 -10 change in turn-off time (%) norm. to 25 c temperature ( c) -40 -20 0 20 40 60 80 i f =5 ma i l =50 ma 01020304050 turn-on time (ms) i l = 50 ma t = 40 c t = 25 c t = 85 c led forward current (ma) 18 15 12 9 6 3 0 turn-off time (ms) t = 85 c t = 25 c t = 40 c led forward current (ma) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 01020304050 i l =50 ma
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